AZ® nLoF™ 5510 Photoresists
AZ nLoF 5510 photoresist is a high resolution negative tone material for single layer lift-off processing. Ideal lift-off profiles for features as small as 0.28µm are achieved with a simple bake, expose, PEB and develop process sequence; no under layers required. Side wall angles are process tunable from strong retro-grade to 90 degrees vertical and removal is easy with standard photoresist strippers. Coated film thickness range is 0.7 to 1.4µm. (AZ 300MIF or AZ 726MIF developers recommended)
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Typical Process
Soft Bake: 90C (60s) Expose: i-line Post Expose Bake: 110C/60s Develop: puddle Developer: AZ 300MIF
0.28µm Lines in AZ nLoF 5510 0.97µm film thickness 134mJ/cm2 i-line exposure 0.60NA Stepper AZ 300MIF Develop
