AZ MiR 701 Series Photoresists are high resolution (0.35um design rules), i-line resists optimized for line/space and contact hole pattern layers. Low exposure dose requirements provide excellent throughput. Reliable performance in both dry and wet etch process environments. The MiR 701 Series covers a coated thickness range of approximately 0.5 to 2.5µm and works well with MIF developers (AZ 300MIF or AZ 726MIF recommended).
6" Si Wafers; Soft Bake 90C
Typical Process
Soft Bake: 90C (60s)
Expose: i-line/broadband
Post Expose Bake: 110C
Develop: spray or puddle
Developer: MIF recommended
0.32µm Lines in AZ MIR 701
0.97µm film thickness
180mJ/cm2 i-line exposure
0.60NA Stepper
AZ 300MIF Develop