AZ® 125nXT Photoresist

AZ 125nXT Series Photoresists are advanced, negative tone photo-polymer materials optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. The fully cross linked features are extremely thermally stable and etch resistant. The extreme transparency of this resist allows for ultra-high aspect ratio imaging not possible with conventional DNQ or CA materials. Develop is very fast in standard MIF Developers; film thicknesses from 20 to 120µm are achievable. No post bake re-hydration delays are required.

Contact your IMM technical representative for more information on AZ 125nXT Photoresist!

 

Typical Process

Soft Bake: 120C               Expose: i-line, h-line, g-line PEB: Not required                 Develop: spray or puddle Developer: AZ 300MIF